Ítem
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Roura Grabulosa, Pere
Costa i Balanzat, Josep Morante i Lleonart, Joan R. Bertrán Serra, Enric |
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| abril 1997 | |
| The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature | |
| application/pdf | |
| Roura i Grabulosa, Pere, Costa i Balanzat, Josep, Morante i Lleonart, Joan. R, i Bertran Serra, Enric (1997). Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 81 (7), 3290 - 3293. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v81/i7/p3290_s1 | |
| 0021-8979 | |
| http://hdl.handle.net/10256/3046 | |
| eng | |
| American Institute of Physics | |
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Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.364312 Articles publicats (D-F) |
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| © Journal of Applied Physics, 1997, vol. 81, núm. 7, p. 3290-3293 | |
| Tots els drets reservats | |
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Fotoluminescència
Semiconductors Materials nanoestructurals Silici Nanostructure materials Photoluminescence Silicon |
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| Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition | |
| info:eu-repo/semantics/article | |
| DUGiDocs |
