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Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature

© Journal of Applied Physics, 1997, vol. 81, núm. 7, p. 3290-3293

American Institute of Physics

Author: Roura Grabulosa, Pere
Costa i Balanzat, Josep
Morante i Lleonart, Joan R.
Bertrán Serra, Enric
Date: 1997 April
Abstract: The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature
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Citation: Roura i Grabulosa, Pere, Costa i Balanzat, Josep, Morante i Lleonart, Joan. R, i Bertran Serra, Enric (1997). Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 81 (7), 3290 - 3293. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v81/i7/p3290_s1
ISSN: 0021-8979
Document access: http://hdl.handle.net/10256/3046
Language: eng
Publisher: American Institute of Physics
Collection: Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.364312
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Is part of: © Journal of Applied Physics, 1997, vol. 81, núm. 7, p. 3290-3293
Rights: Tots els drets reservats
Subject: Fotoluminescència
Semiconductors
Materials nanoestructurals
Silici
Nanostructure materials
Photoluminescence
Silicon
Title: Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition
Type: info:eu-repo/semantics/article
Repository: DUGiDocs

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