Ítem
|
Roura Grabulosa, Pere
López-de Miguel, Manel Cornet i Calveras, Albert Morante i Lleonart, Joan R. |
|
| maig 1997 | |
| A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV | |
| application/pdf | |
| Roura, P., López-de Miguel, M., Cornet, A., i Morante, J. R. (1997). Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy. Journal of Applied Physics, 81 (10), 6916 - 6920. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v81/i10/p6916_s1 | |
| 0021-8979 | |
| http://hdl.handle.net/10256/3048 | |
| eng | |
| American Institute of Physics | |
|
Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.365253 Articles publicats (D-F) |
|
| © Journal of Applied Physics, 1997, vol. 81, núm. 10, p. 6916-6920 | |
| Tots els drets reservats | |
|
Compostos d’alumini
Compostos d’indi Fotoluminescència Semiconductors Aluminum compounds Indium compounds Photoluminescence |
|
| Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy | |
| info:eu-repo/semantics/article | |
| DUGiDocs |
