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Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05

© Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152

American Institute of Physics

Autor: Roura Grabulosa, Pere
Vilà Arbonés, Anna
Bosch, J.
López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
Westwood, D. I.
Data: 1997
Resum: The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05
Format: application/pdf
Cita: Roura, P., Vila, A., Bosch, J., Lopez, M., Cornet, A., Morante, J. R., et al. (1997). Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers. Journal of Applied Physics, 82 (3), 1147 - 1152. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v82/i3/p1147_s1
ISSN: 0021-8979
Accés al document: http://hdl.handle.net/10256/3049
Llenguatge: eng
Editor: American Institute of Physics
Col·lecció: Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.365881
Articles publicats (D-F)
És part de: © Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152
Drets: Tots els drets reservats
Matèria: Gal·li
Compostos d’indi
Espectres d’absorció
Semiconductors
Absorption spectra
Gallium
Indium compounds
Títol: Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Tipus: info:eu-repo/semantics/article
Repositori: DUGiDocs

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