Item


Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05

© Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152

American Institute of Physics

Author: Roura Grabulosa, Pere
Vilà Arbonés, Anna
Bosch, J.
López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
Westwood, D. I.
Date: 1997
Abstract: The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05
Format: application/pdf
Citation: Roura, P., Vila, A., Bosch, J., Lopez, M., Cornet, A., Morante, J. R., et al. (1997). Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers. Journal of Applied Physics, 82 (3), 1147 - 1152. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v82/i3/p1147_s1
ISSN: 0021-8979
Document access: http://hdl.handle.net/10256/3049
Language: eng
Publisher: American Institute of Physics
Collection: Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.365881
Articles publicats (D-F)
Is part of: © Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152
Rights: Tots els drets reservats
Subject: Gal·li
Compostos d’indi
Espectres d’absorció
Semiconductors
Absorption spectra
Gallium
Indium compounds
Title: Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Type: info:eu-repo/semantics/article
Repository: DUGiDocs

Subjects

Authors