DUGi: Ítem | DUGiDocs - Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

Ítem

Autor:	Roura Grabulosa, Pere Vilà i Arbonès, Anna Maria Bosch, J. López-de Miguel, Manel Cornet i Calveras, Albert Morante i Lleonart, Joan R. Westwood, D. I.
Data:	1997
Resum:	The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05
Format:	application/pdf
Cita:	Roura, P., Vila, A., Bosch, J., Lopez, M., Cornet, A., Morante, J. R., et al. (1997). Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers. Journal of Applied Physics, 82 (3), 1147 - 1152. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v82/i3/p1147_s1
Accés al document:	http://hdl.handle.net/10256/3049
Llenguatge:	eng
Editor:	American Institute of Physics
Col·lecció:	info:eu-repo/semantics/altIdentifier/doi/10.1063/1.365881 info:eu-repo/semantics/altIdentifier/issn/0021-8979
Drets:	Tots els drets reservats
Matèria:	Gal·li Compostos d’indi Espectres d’absorció Semiconductors Absorption spectra Gallium Indium compounds
Títol:	Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Tipus:	info:eu-repo/semantics/article
Repositori:	DUGiDocs