Ítem
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Das, Debabrata
Farjas Silva, Jordi Roura Grabulosa, Pere Viera Mármol, Gregorio Bertrán Serra, Enric |
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| novembre 2001 | |
| Oxidation of amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition were investigated. Their hydrogen content has a great influence on the oxidation rate at low temperature. When the mass gain is recorded during a heating ramp in dry air, an oxidation process at low temperature is identified with an onset around 250°C. This temperature onset is similar to that of hydrogen desorption. It is shown that the oxygen uptake during this process almost equals the number of hydrogen atoms present in the nanoparticles. To explain this correlation, we propose that oxidation at low temperature is triggered by the process of hydrogen desorption | |
| application/pdf | |
| Das, D., Farjas, J., Roura, P., Viera, G., i Bertran, E. (2001). Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation. Applied Physics Letters, 79 (22), 3705 - 3707. Recuperat 28 setembre 2010, a http://apl.aip.org/resource/1/applab/v79/i22/p3705_s1 | |
| 0003-6951 | |
| http://hdl.handle.net/10256/3051 | |
| eng | |
| American Institute of Physics | |
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Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.1420533 Articles publicats (D-F) |
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| © Applied Physics Letters, 2001, vol. 79, núm. 22, p. 3705-3707 | |
| Tots els drets reservats | |
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Anàlisi tèrmica
Hidrogenació Semiconductors amorfs Silici -- Oxidació Materials nanoestructurals Amorphous semiconductors Hydrogenation Nanostructure materials Silicon -- Oxidation Thermal analysis |
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| Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation | |
| info:eu-repo/semantics/article | |
| DUGiDocs |
