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Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation

Oxidation of amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition were investigated. Their hydrogen content has a great influence on the oxidation rate at low temperature. When the mass gain is recorded during a heating ramp in dry air, an oxidation process at low temperature is identified with an onset around 250°C. This temperature onset is similar to that of hydrogen desorption. It is shown that the oxygen uptake during this process almost equals the number of hydrogen atoms present in the nanoparticles. To explain this correlation, we propose that oxidation at low temperature is triggered by the process of hydrogen desorption

© Applied Physics Letters, 2001, vol. 79, núm. 22, p. 3705-3707

American Institute of Physics

Author: Das, Debabrata
Farjas Silva, Jordi
Roura Grabulosa, Pere
Viera Mármol, Gregorio
Bertrán Serra, Enric
Date: 2001 November
Abstract: Oxidation of amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition were investigated. Their hydrogen content has a great influence on the oxidation rate at low temperature. When the mass gain is recorded during a heating ramp in dry air, an oxidation process at low temperature is identified with an onset around 250°C. This temperature onset is similar to that of hydrogen desorption. It is shown that the oxygen uptake during this process almost equals the number of hydrogen atoms present in the nanoparticles. To explain this correlation, we propose that oxidation at low temperature is triggered by the process of hydrogen desorption
Format: application/pdf
Citation: Das, D., Farjas, J., Roura, P., Viera, G., i Bertran, E. (2001). Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation. Applied Physics Letters, 79 (22), 3705 - 3707. Recuperat 28 setembre 2010, a http://apl.aip.org/resource/1/applab/v79/i22/p3705_s1
ISSN: 0003-6951
Document access: http://hdl.handle.net/10256/3051
Language: eng
Publisher: American Institute of Physics
Collection: Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.1420533
Articles publicats (D-F)
Is part of: © Applied Physics Letters, 2001, vol. 79, núm. 22, p. 3705-3707
Rights: Tots els drets reservats
Subject: Anàlisi tèrmica
Hidrogenació
Semiconductors amorfs
Silici -- Oxidació
Materials nanoestructurals
Amorphous semiconductors
Hydrogenation
Nanostructure materials
Silicon -- Oxidation
Thermal analysis
Title: Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation
Type: info:eu-repo/semantics/article
Repository: DUGiDocs

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