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Farjas Silva, Jordi
Rath, Chandana Pinyol i Agelet, Albert Roura Grabulosa, Pere Bertrán Serra, Enric |
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| 2005 | |
| A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions | |
| application/pdf | |
| Farjas Silva, J., Rath, Ch., Pinyol i Agelet, A., Roura i Grabulosa, P., i Bertran, E. (2005). Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation. Applied Physics Letters, 87 (19), 192114. Recuperat 28 setembre 2010, a http://apl.aip.org/resource/1/applab/v87/i19/p192114_s1 | |
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0003-6951 (versió paper) 1077-3118 (versió electrònica) |
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| http://hdl.handle.net/10256/3212 | |
| eng | |
| American Institute of Physics | |
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Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.2130380 Articles publicats (D-F) |
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| © Applied Physics Letters, 2005, vol. 87, núm. 19 | |
| Tots els drets reservats | |
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Materials nanoestructurals
NanopartÃcules Nitrurs Semiconductors Silici -- Compostos Silici -- Oxidació Nanoparticles Nanostructure materials Nitrides Silicon -- Oxidation Silicon compounds |
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| Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation | |
| info:eu-repo/semantics/article | |
| DUGiDocs |
