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Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions

© Applied Physics Letters, 2005, vol. 87, núm. 19

American Institute of Physics

Author: Farjas Silva, Jordi
Rath, Chandana
Pinyol i Agelet, Albert
Roura Grabulosa, Pere
Bertrán Serra, Enric
Date: 2005
Abstract: A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions
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Citation: Farjas Silva, J., Rath, Ch., Pinyol i Agelet, A., Roura i Grabulosa, P., i Bertran, E. (2005). Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation. Applied Physics Letters, 87 (19), 192114. Recuperat 28 setembre 2010, a http://apl.aip.org/resource/1/applab/v87/i19/p192114_s1
ISSN: 0003-6951 (versió paper)
1077-3118 (versió electrònica)
Document access: http://hdl.handle.net/10256/3212
Language: eng
Publisher: American Institute of Physics
Collection: Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.2130380
Articles publicats (D-F)
Is part of: © Applied Physics Letters, 2005, vol. 87, núm. 19
Rights: Tots els drets reservats
Subject: Materials nanoestructurals
Nanopartícules
Nitrurs
Semiconductors
Silici -- Compostos
Silici -- Oxidació
Nanoparticles
Nanostructure materials
Nitrides
Silicon -- Oxidation
Silicon compounds
Title: Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation
Type: info:eu-repo/semantics/article
Repository: DUGiDocs

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