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Oxidation of silicon: further tests for the interfacial silicon emission model

The classical description of Si oxidation given by Deal and Grove has well-known limitations for thin oxides (below 200 Ã). Among the large number of alternative models published so far, the interfacial emission model has shown the greatest ability to fit the experimental oxidation curves. It relies on the assumption that during oxidation Si interstitials are emitted to the oxide to release strain and that the accumulation of these interstitials near the interface reduces the reaction rate there. The resulting set of differential equations makes it possible to model diverse oxidation experiments. In this paper, we have compared its predictions with two sets of experiments: (1) the pressure dependence for subatmospheric oxygen pressure and (2) the enhancement of the oxidation rate after annealing in inert atmosphere. The result is not satisfactory and raises serious doubts about the model’s correctness

© Journal of Applied Physics, 2007, vol. 102

American Institute of Physics

Author: Farjas Silva, Jordi
Roura Grabulosa, Pere
Date: 2007
Abstract: The classical description of Si oxidation given by Deal and Grove has well-known limitations for thin oxides (below 200 Ã). Among the large number of alternative models published so far, the interfacial emission model has shown the greatest ability to fit the experimental oxidation curves. It relies on the assumption that during oxidation Si interstitials are emitted to the oxide to release strain and that the accumulation of these interstitials near the interface reduces the reaction rate there. The resulting set of differential equations makes it possible to model diverse oxidation experiments. In this paper, we have compared its predictions with two sets of experiments: (1) the pressure dependence for subatmospheric oxygen pressure and (2) the enhancement of the oxidation rate after annealing in inert atmosphere. The result is not satisfactory and raises serious doubts about the model’s correctness
Format: application/pdf
Citation: Farjas Silva, J., i Roura i Grabulosa, P. (2007). Oxidation of silicon: further tests for the interfacial silicon emission model. Journal of Applied Physics, 102 (5), 054902. Recuperat 22 març 2011, a http://jap.aip.org/resource/1/japiau/v102/i5/p054902_s1
ISSN: 0021-8979 (versió paper)
1089-7550 (versió electrònica)
Document access: http://hdl.handle.net/10256/3213
Language: eng
Publisher: American Institute of Physics
Collection: Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.2773693
Articles publicats (D-F)
Is part of: © Journal of Applied Physics, 2007, vol. 102
Rights: Tots els drets reservats
Subject: Semiconductors
Silici -- Oxidació
Silicon -- Oxidation
Title: Oxidation of silicon: further tests for the interfacial silicon emission model
Type: info:eu-repo/semantics/article
Repository: DUGiDocs

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