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Farjas Silva, Jordi
Roura Grabulosa, Pere |
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| 2007 | |
| The classical description of Si oxidation given by Deal and Grove has well-known limitations for thin oxides (below 200 脙). Among the large number of alternative models published so far, the interfacial emission model has shown the greatest ability to fit the experimental oxidation curves. It relies on the assumption that during oxidation Si interstitials are emitted to the oxide to release strain and that the accumulation of these interstitials near the interface reduces the reaction rate there. The resulting set of differential equations makes it possible to model diverse oxidation experiments. In this paper, we have compared its predictions with two sets of experiments: (1) the pressure dependence for subatmospheric oxygen pressure and (2) the enhancement of the oxidation rate after annealing in inert atmosphere. The result is not satisfactory and raises serious doubts about the model鈥檚 correctness | |
| application/pdf | |
| Farjas Silva, J., i Roura i Grabulosa, P. (2007). Oxidation of silicon: further tests for the interfacial silicon emission model. Journal of Applied Physics, 102 (5), 054902. Recuperat 22 mar莽 2011, a http://jap.aip.org/resource/1/japiau/v102/i5/p054902_s1 | |
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0021-8979 (versi贸 paper) 1089-7550 (versi贸 electr貌nica) |
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| http://hdl.handle.net/10256/3213 | |
| eng | |
| American Institute of Physics | |
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Reproducci贸 digital del document publicat a: http://dx.doi.org/10.1063/1.2773693 Articles publicats (D-F) |
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| 漏 Journal of Applied Physics, 2007, vol. 102 | |
| Tots els drets reservats | |
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Semiconductors
Silici -- Oxidaci贸 Silicon -- Oxidation |
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| Oxidation of silicon: further tests for the interfacial silicon emission model | |
| info:eu-repo/semantics/article | |
| DUGiDocs |
