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Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

漏 Applied Physics Letters, 2010, vol. 97, n煤m. 3, p. 244308

American Institute of Physics

Author: Kail, Fatiha
Farjas Silva, Jordi
Roura Grabulosa, Pere
Secouard, Christopher
Nos, Oriol
Bertomeu, Joan Prat
Alzina, F.
Roca i Cabarrocas, Pere
Date: 2010
Abstract: The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon
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Citation: Kail, F., Farjas, J., Roura, P., Secouard, C., Nos, O., Bertomeu, J., Alzina, F., i Roca I Cabarrocas, P. (2010). Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments. Applied Physics Letters, 97 (3), 031918. Recuperat 23 mar莽 2011, a http://link.aip.org/link/doi/10.1063/1.3464961
ISSN: 0021-9606 (versi贸 paper)
1089-7690 (versi贸 electr貌nica)
Document access: http://hdl.handle.net/10256/3297
Language: eng
Publisher: American Institute of Physics
Collection: Reproducci贸 digital del document publicat a: http://dx.doi.org/10.1063/1.3464961
Articles publicats (D-F)
Is part of: 漏 Applied Physics Letters, 2010, vol. 97, n煤m. 3, p. 244308
Rights: Tots els drets reservats
Subject: Amorphous semiconductors
Espectrosc貌pia Raman
Hidrogenaci贸
Semiconductors amorfs
Silici
Hydrogenation
Raman spectroscopy
Title: Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Type: info:eu-repo/semantics/article
Repository: DUGiDocs

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