Ítem
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Farjas Silva, Jordi
Das, Debabrata Fort, Joaquim Roura Grabulosa, Pere Bertrán Serra, Enric |
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| 2002 | |
| The process of hydrogen desorption from amorphous silicon (ɑ-Si) nanoparticles grown by plasmaenhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 °C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in ɑ-Si is about 1.15 eV. It is shown that this result is valid for ɑ-Si:H films, too | |
| application/pdf | |
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1098-0121 (versió paper) 1550-235X (versió electrònica) |
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| http://hdl.handle.net/10256/7696 | |
| eng | |
| American Physical Society | |
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Reproducció digital del document publicat a: http://dx.doi.org/10.1103/PhysRevB.65.115403 Articles publicats (D-F) |
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| © Physical Review B, 2002, vol. 65, num. 11, p. 115403-115407 | |
| Tots els drets reservats | |
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Ciència dels materials
Materials science Semiconductors amorfs Amorphous semiconductors Capes fines Thin films Materials nanoestructurals Nanostructure materials |
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| Calorimetry of hydrogen desorption from ɑ-Si nanoparticles | |
| info:eu-repo/semantics/article | |
| DUGiDocs |
