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Kail, Fatiha
Farjas Silva, Jordi Roura Grabulosa, Pere |
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2009 | |
We study hydrogen stability and its evolution during thermal annealing in nanostructured amorphous silicon thin films. From the simultaneous measurement of heat and hydrogen desorption, we obtain the experimental evidence of molecular diffusion in these materials. In addition, we introduce a simple diffusion model which shows good agreement with the experimental data | |
application/pdf | |
1098-0121 (versi贸 paper) 1550-235X (versi贸 electr貌nica) |
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http://hdl.handle.net/10256/8575 | |
eng | |
American Physical Society | |
Reproducci贸 digital del document publicat a: http://dx.doi.org/10.1103/PhysRevB.80.073202 Articles publicats (D-F) |
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漏 Physical Review B, 2009, vol. 80, n煤m. 7, p. 073202 | |
Tots els drets reservats | |
Hidrogenaci贸
Hydrogenation Silici Silicon Materials nanoestructurals Nanostructure materials Thin films Capes fines |
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Molecular hydrogen diffusion in nanostructured amorphous silicon thin films | |
info:eu-repo/semantics/article | |
DUGiDocs |