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Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions

American Institute of Physics

Author: Farjas Silva, Jordi
Rath, Chandana
Pinyol i Agelet, Albert
Roura Grabulosa, Pere
Bertrán Serra, Enric
Abstract: A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions
Document access: http://hdl.handle.net/2072/101663
Language: eng
Publisher: American Institute of Physics
Rights: Tots els drets reservats
Subject: Materials nanoestructurals
Nanopartícules
Nitrurs
Semiconductors
Silici -- Compostos
Silici -- Oxidació
Nanoparticles
Nanostructure materials
Nitrides
Silicon -- Oxidation
Silicon compounds
Title: Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation
Type: info:eu-repo/semantics/article
Repository: Recercat

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