Ítem
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Farjas Silva, Jordi
Rath, Chandana Pinyol i Agelet, Albert Roura Grabulosa, Pere Bertrán Serra, Enric |
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| A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions | |
| http://hdl.handle.net/2072/101663 | |
| eng | |
| American Institute of Physics | |
| Tots els drets reservats | |
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Materials nanoestructurals
Nanopartícules Nitrurs Semiconductors Silici -- Compostos Silici -- Oxidació Nanoparticles Nanostructure materials Nitrides Silicon -- Oxidation Silicon compounds |
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| Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation | |
| info:eu-repo/semantics/article | |
| Recercat |
