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Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

American Institute of Physics

Author: Kail, Fatiha
Farjas Silva, Jordi
Roura Grabulosa, Pere
Secouard, Christopher
Nos, Oriol
Bertomeu, Joan Prat
Alzina, F.
Roca i Cabarrocas, Pere
Abstract: The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon
Document access: http://hdl.handle.net/2072/116716
Language: eng
Publisher: American Institute of Physics
Rights: Tots els drets reservats
Subject: Amorphous semiconductors
Espectroscòpia Raman
Hidrogenació
Semiconductors amorfs
Silici
Hydrogenation
Raman spectroscopy
Title: Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Type: info:eu-repo/semantics/article
Repository: Recercat

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