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Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon

The specific heat, cp, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100–900K temperature range. When the hydrogen content is reduced by thermal annealing, cp approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that cp of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted

American Institute of Physics

Author: Roura Grabulosa, Pere
Taïr, Fadila
Farjas Silva, Jordi
Roca i Cabarrocas, Pere
Abstract: The specific heat, cp, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100–900K temperature range. When the hydrogen content is reduced by thermal annealing, cp approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that cp of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted
Document access: http://hdl.handle.net/2072/294926
Language: eng
Publisher: American Institute of Physics
Rights: Tots els drets reservats
Subject: Semiconductors amorfs
Amorphous semiconductors
Termodinàmica
Thermodynamic
Title: Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon
Type: info:eu-repo/semantics/article
Repository: Recercat

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