Ítem
1 juny 2018 | |
http://hdl.handle.net/2072/311934 | |
American Institute of Physics | |
Tots els drets reservats | |
Amorphous semiconductors
Espectroscòpia Raman Hidrogenació Semiconductors amorfs Silici Hydrogenation Raman spectroscopy |
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Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments | |
info:eu-repo/semantics/article | |
Recercat |