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DUGi: Ítem | Recercat - Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

Ítem


Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

American Institute of Physics

Data: 1 juny 2018
Accés al document: http://hdl.handle.net/2072/311934
Editor: American Institute of Physics
Drets: Tots els drets reservats
Matèria: Amorphous semiconductors
Espectroscòpia Raman
Hidrogenació
Semiconductors amorfs
Silici
Hydrogenation
Raman spectroscopy
Títol: Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Tipus: info:eu-repo/semantics/article
Repositori: Recercat

Matèries


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Autors


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