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Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

American Institute of Physics

Date: 2018 June 1
Document access: http://hdl.handle.net/2072/311934
Publisher: American Institute of Physics
Rights: Tots els drets reservats
Subject: Amorphous semiconductors
Espectroscòpia Raman
Hidrogenació
Semiconductors amorfs
Silici
Hydrogenation
Raman spectroscopy
Title: Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Type: info:eu-repo/semantics/article
Repository: Recercat

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