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Roura Grabulosa, Pere
Taïr, Fadila Farjas Silva, Jordi Roca i Cabarrocas, Pere |
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| 2018 June 5 | |
| The specific heat, cp, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100–900K temperature range. When the hydrogen content is reduced by thermal annealing, cp approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that cp of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted | |
| http://hdl.handle.net/2072/320455 | |
| eng | |
| American Institute of Physics | |
| Tots els drets reservats | |
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Semiconductors amorfs
Amorphous semiconductors Termodinà mica Thermodynamic |
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| Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon | |
| info:eu-repo/semantics/article | |
| Recercat |
