DUGi: Item | Recercat - Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

Item

Author:	Kail, Fatiha Farjas Silva, Jordi Roura Grabulosa, Pere Secouard, Christopher Nos, Oriol Bertomeu, Joan Prat Alzina, F. Roca i Cabarrocas, Pere
Date:	2018 June 5
Abstract:	The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon
Document access:	http://hdl.handle.net/2072/320749
Language:	eng
Publisher:	American Institute of Physics
Rights:	Tots els drets reservats
Subject:	Amorphous semiconductors Espectroscòpia Raman Hidrogenació Semiconductors amorfs Silici Hydrogenation Raman spectroscopy
Title:	Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Type:	info:eu-repo/semantics/article
Repository:	Recercat