Ítem
|
Roura Grabulosa, Pere
Costa i Balanzat, Josep Morante i Lleonart, Joan R. Bertrán Serra, Enric |
|
| The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature | |
| http://hdl.handle.net/2072/94951 | |
| eng | |
| American Institute of Physics | |
| Tots els drets reservats | |
|
Fotoluminescència
Semiconductors Materials nanoestructurals Silici Nanostructure materials Photoluminescence Silicon |
|
| Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition | |
| info:eu-repo/semantics/article | |
| Recercat |
