DUGi: Item | Recercat - Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

Item

Author:	Roura Grabulosa, Pere López-de Miguel, Manel Cornet i Calveras, Albert Morante i Lleonart, Joan R.
Abstract:	A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV
Document access:	http://hdl.handle.net/2072/94953
Language:	eng
Publisher:	American Institute of Physics
Rights:	Tots els drets reservats
Subject:	Compostos d’alumini Compostos d’indi Fotoluminescència Semiconductors Aluminum compounds Indium compounds Photoluminescence
Title:	Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
Type:	info:eu-repo/semantics/article
Repository:	Recercat