Ítem
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Roura Grabulosa, Pere
López-de Miguel, Manel Cornet i Calveras, Albert Morante i Lleonart, Joan R. |
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| A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV | |
| http://hdl.handle.net/2072/94953 | |
| eng | |
| American Institute of Physics | |
| Tots els drets reservats | |
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Compostos d’alumini
Compostos d’indi Fotoluminescència Semiconductors Aluminum compounds Indium compounds Photoluminescence |
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| Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy | |
| info:eu-repo/semantics/article | |
| Recercat |
