Ítem
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Roura Grabulosa, Pere
Vilà Arbonés, Anna Bosch, J. López-de Miguel, Manel Cornet i Calveras, Albert Morante i Lleonart, Joan R. Westwood, D. I. |
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The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05 | |
| http://hdl.handle.net/2072/94954 | |
| eng | |
| American Institute of Physics | |
| Tots els drets reservats | |
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Gal·li
Compostos d’indi Espectres d’absorció Semiconductors Absorption spectra Gallium Indium compounds |
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| Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers | |
| info:eu-repo/semantics/article | |
| Recercat |
