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Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05

American Institute of Physics

Author: Roura Grabulosa, Pere
Vilà Arbonés, Anna
Bosch, J.
López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
Westwood, D. I.
Abstract: The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05
Document access: http://hdl.handle.net/2072/94954
Language: eng
Publisher: American Institute of Physics
Rights: Tots els drets reservats
Subject: Gal·li
Compostos d’indi
Espectres d’absorció
Semiconductors
Absorption spectra
Gallium
Indium compounds
Title: Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Type: info:eu-repo/semantics/article
Repository: Recercat

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